SI VA SIO₂ SIRTLARIDA HOSIL QILINGAN SIME VA SIO₂SIME YUPQA PLYONKALARNING STRUKTURAVIY TUZILISHI HAMDA ULARNING ELEKTROFIZIK VA OPTIK PARAMETRLARINI KOMPLEKS TAHLILI
;
Si nanostruktura, SiO₂, SiMe, sirt funksionalizatsiyasi, kvant cheklanish, rekombinatsiya, optik xossalar.Abstrak
Ushbu tadqiqotda Si va SiO₂ sirtlarida hosil qilingan SiMe va SiO₂SiMe tipidagi yupqa plyonkalarning strukturaviy tuzilishi, elektrofizik va optik xossalari kompleks ravishda tadqiq etildi. Yupqa plyonkalar zamonaviy depozitsiya usullari asosida sintez qilinib, ularning mikro- va nanostrukturasi, kimyoviy bog‘lanishlari hamda sirt morfologiyasi turli fizik tahlil usullari yordamida o‘rganildi. Olingan natijalar SiO₂ asosidagi plyonkalarning asosan amorf tuzilishga ega ekanligini, Si bilan modifikatsiyalangan tizimlarda esa nanokristall kremniy klasterlari hosil bo‘lishini ko‘rsatdi.Elektrofizik o‘lchovlar plyonkalarning elektr o‘tkazuvchanligi, dielektrik parametrlar va zaryad tashuvchilar transport mexanizmlarining ularning tarkibi va strukturaviy holatiga bevosita bog‘liqligini aniqladi. Xususan, Si miqdorining ortishi natijasida zaryad tashuvchilarning energiya to‘sig‘idan kvant yo‘l bilan o‘tish ehtimoli oshishi va o‘tkazuvchanlikning sezilarli darajada ortishi kuzatildi.
Iqtiboslar
Sze S. M. Semiconductor devices: physics and technology.-John wiley & sons, 2008.
Canham L. T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers //Applied physics letters. – 1990. – Т. 57. – №. 10. – С. 1046-1048.
Carlsson J. O., Martin P. M. Chemical vapor deposition //Handbook of Deposition Technologies for films and coatings. – William Andrew Publishing, 2010. – С. 314-363.
Iacona F., Franzò G., Spinella C. Correlation between luminescence and structural properties of Si nanocrystals //Journal of Applied Physics. – 2000. – Т. 87. – №. 3. – С. 1295-1303.
Guerra R., Ossicini S. Kichik Si/SiO2 nanokristallarida yuqori lyuminestsentsiya: Nazariy tadqiqot // Fizik sharh B -Kondensatsiyalangan materiya va materiallar fizikasi. – 2010. – T. 81. – №. 24. – S. 245307.
Otajonov S. et al. INFLUENCE OF DEEP IMPURITY ON PHOTOSENSITIVITY OF CdTe-SiO₂-Si HETEROSTRUCTURE //Scientific journal of the Fergana State University. – 2025. – №. 3. – С. 160-160.
Zachariasen W. H. The atomic arrangement in glass //Journal of the American Chemical Society. – 1932. – Т. 54. – №. 10. – С. 3841-3851.
Sze S. M., Li Y., Ng K. K. Physics of semiconductor devices. – John wiley & sons, 2021.
Wilson A. H. The theory of electronic semi-conductors //Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character. – 1931. – Т. 133. – №. 822. – С. 458-491.
Brus L. E. Electron–electron and electron‐hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state //The Journal of chemical physics. – 1984. – Т. 80. – №. 9. – С. 4403-4409.
Canham L. T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers //Applied physics letters. – 1990. – Т. 57. – №. 10. – С. 1046-1048.
##submission.downloads##
Nashr qilingan
Nashr
Bo'lim
Iqtibos keltirish tartibi